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DC COMPONENTS CO., LTD.
R
2SC1815
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier general purpose amplification.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 60 50 5 150 50 400 +150 -55 to +150 Unit V V V mA mA mW
o o 321 .050 Typ (1.27)
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 60 50 5 70 25 80 2%
Typ -
Max 100 100 0.25 1 700 3.5
Unit V V V nA nA V V MHz pF
Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA IC=2mA, VCE=6V IC=150mA, VCE=6V IC=1mA, VCE=10V VCB=10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
(1) (1)
VCE(sat) VBE(sat) hFE1 hFE2 fT Cob
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380s, Duty Cycle
Classification of hFE1
Rank Range
O
70~140
Y
120~240
GR
200~400
BL
350~700

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